Determination of the planarization distance for copper CMP process

Materials Research Society Symposium - Proceedings

Volumn 566, Issue , 1999, Pages 211-216

  Hymes, S ^a   Smekalin, K ^a,b   Brown, T ^a   Yeung, H ^c   Joffe, M ^c   Banet, M ^c   Park, T ^d   Tugbawa, T ^d   Boning, D ^d   Nguyen, J ^e   West, T ^f   Sands, W ^f  

^a SEMATECH   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c Malvern Instruments Inc   (United States)

^d Massachusetts Institute of Technology   (United States)

^e IPEC Planar   (United States)

^f T West W Sands Thomas West Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTOOPTICAL EFFECTS; COPPER; INTEGRATED CIRCUIT MANUFACTURE; SILICON WAFERS; SLURRIES; THICKNESS MEASUREMENT;

ACOUSTOOPTIC MEASUREMENT; COPPER OVERBURDEN PLANARIZATION; PATTERN DEPENDENCIES; PLANARIZATION DISTANCE; PLANARIZATION MONITOR; PROFILOMETRY; STEP HEIGHT REDUCTION RATIO;

CHEMICAL POLISHING;

EID: 0033737240     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-566-211     Document Type: Article

References (5)

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3. T.H. Smith, S.J. Fang, D.S. Boning, G.B. Shinn and J.A. Stefani, Proc. CMPMIC, p. 97-104, (1999).
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5. M.A. Joffe, H. Yeung, M. Fuchs and M. Banet and S. Hymes, Proc. CMPMIC, p. 73-6, (1999).