Initial growth prismatic domains in cyclotron assisted MBE of GaN/SiC

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Vermaut, Philippe ^a   Ruterana, P ^a   Nouet, G ^a   Salvador, A ^b   Morkoc H ^b  

^a CNRS   (France)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; EVAPORATION; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; REACTION KINETICS; THERMODYNAMIC STABILITY;

GROUP III NITRIDES; PHYSIOSORPTION; THERMAL DESORPTION;

NITRIDES;

EID: 4043076331     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300002143     Document Type: Article

References (14)

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9. P Vermaut, P Ruterana, G Nouet, H Morkoç, Phil Mag. A 75, 239 (1996).
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14. P Vermaut, P Ruterana, G Nouet, H Morkoç, unpublished (1996).