X-ray reciprocal space mapping studies of strained GaN/AlGaN quantum wells

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Briot, Olivier ^a   Ruffenach Clur, Sandra ^a   Moret, Matthieu ^a   Aulombard, Roger Louis ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUMERICAL ANALYSIS; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING ALUMINUM COMPOUNDS; STRAIN; THICKNESS MEASUREMENT; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM NITRIDE; X-RAY RECIPROCAL SPACE MAPPING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035557619     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)