Carbon diffusion and clustering in SiGeC layers under thermal oxidation

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages J681-J686

  De Salvador, D ^a   Napolitani, E ^a   Coati, A ^a   Berti, M ^a   Drigo, A V ^a   Carroll, M ^a   Sturm, J C ^a   Stangl, J ^a   Bauer, G ^a   Lazzarini, L ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; DIFFUSION IN SOLIDS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); PRECIPITATION (CHEMICAL); SUPERSATURATION; THERMOOXIDATION;

TRANSIENT ENHANCED DIFFUSIONS (TED);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035557029     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. Germanium silicon, physics and materials