Electronic and optical properties of high quality low bandgap amorphous (Ge, Si) alloys

Materials Research Society Symposium - Proceedings

Volumn 664, Issue , 2001, Pages A841-A846

  Sheng, S R ^a   Braunstein, R ^a   Dalal, V L ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Iowa State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHARGE TRANSFER; COMPOSITION; DOPING (ADDITIVES); ELECTRIC FIELDS; ENERGY GAP; GERMANIUM ALLOYS; LIGHT ABSORPTION; MICROWAVES; PHOTOCONDUCTIVITY; SILICON ALLOYS;

PHOTOMIXING;

AMORPHOUS ALLOYS;

EID: 0035556734     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-664-a8.4     Document Type: Article

References (14)

1. NREL/SNL photovoltaics program review meeting