Influence of plasma chemistry on the properties of amorphous (Si,Ge) alloy devices

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 441-446

  Dalal, Vikram L ^a   Maxson, Tim ^a   Haroon, Sohail ^a  

^a IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; AMORPHOUS FILMS; ELECTRON CYCLOTRON RESONANCE; ELECTRONIC PROPERTIES; HELIUM; HYDROGEN; ION BOMBARDMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIATION EFFECTS; SEMICONDUCTING FILMS; SILICON ALLOYS; SILICON SOLAR CELLS;

PLASMA CHEMISTRY; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032647721     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)