Continuous decay of drift mobility in intrinsic a-Si:H and a-SiC:H upon light soaking investigated by the photomixing technique

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 850-857

  Tang, Yi ^a   Braunstein, R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEFECTS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; GLOW DISCHARGES; HETERODYNING; KINETIC THEORY; PHOTOCONDUCTIVITY; SILICON CARBIDE;

CARRIER TRAPPING; DRIFT MOBILITY; ELECTRON LIFETIME; LIGHT SOAKING; PHOTOMIXING; STAEBLER-WRONSKI EFFECT; TIME OF FLIGHT MEASUREMENTS;

AMORPHOUS SILICON;

EID: 0029772262     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360904     Document Type: Article

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