Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications

IEEE Nuclear Science Symposium and Medical Imaging Conference

Volumn 4, Issue , 2002, Pages 2424-2428

  Szeles, Csaba ^a   Cameron, Scott E ^a   Ndap, Jean Olivier ^a   Chalmers, William C ^a  

^a II VI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRO-DYNAMIC GRADIENT TECHNIQUE; SEMI-INSULATING CADMIUM ZINC TELLURIDE;

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRODYNAMICS; ELECTRON MOBILITY; PRESSURE CONTROL; RADIATION DETECTORS; SOLIDIFICATION; STOICHIOMETRY; TELLURIUM;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0035555110     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Current issues of high-pressure Bridgman growth of semi-insulating CdZnTe
2. Effect of deep levels on semiconductor carrier concentration in the case of "strong" compensation
3. Semi-insulating CdZnTe with improved structural perfection for radiation detector applications
4. Electrical compensation in CdTe and CdZnte by intrinsic defects
5. Basic problems of vertical Bridgman growth of CdTe
6. Vapor pressure scanning of nonstoichiometry in CdTe
7. Recipe to minimize Te precipitation in CdTe and (Cd,Zn)Te crystals
8. Distribution and genesis of inclusions in CdTe and (Cd,Zn)Te single crystals grown by the Bridgman method and the traveling heater method
9. Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality