High performance SOI/Cu SRAMs and memories in microprocessors

Advanced Metallization Conference (AMC)

Volumn , Issue , 2001, Pages 347-353

  Joshi, R V ^a   Kang, S ^a   Chuang, C T ^a   Shahidi, G ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER HARDWARE; COPPER; HEATING; SILICON ON INSULATOR TECHNOLOGY; STATIC RANDOM ACCESS STORAGE;

PULSEWIDTH CONTROL;

MICROPROCESSOR CHIPS;

EID: 0035555090     PISSN: 10480854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. A 0.25μm CMOS SOI technology and its application to 4 Mb SRAM
2. A 666 MHz self-resetting 8 Port, 32x64 bits register file and latch in 0.25μm SOI technology
3. A 0.2μm 1.8 V SOI 550 MHz 64 b PowerPC microprocessor with Cu interconnects
4. A 2 GHz cycle, 430 ps access time 34 Kb L1 directory SRAM in 1.5 V, 0.18μm CMOS bulk technology
5. 3 D thermal analysis for SOI and its impact on circuit performance
6. Measurement and modeling of self-heating in SOI NMOSFET's
7. Physical modeling of temperature dependencies of SOI CMOS devices and circuits including self-heating