Electrostatic discharge sensitivity tests for ISFET sensors

Sensors and Actuators, B: Chemical

Volumn 80, Issue 3, 2001, Pages 255-260

  Baldi, A ^a   Bratov, A ^a   Mas, R ^a   Dominguez C ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Chemical sensor; Electrostatic discharge (ESD); ISFET; Reliability

Indexed keywords

ELECTRIC DISCHARGES; ELECTRODES; GATES (TRANSISTOR); SENSITIVITY ANALYSIS;

ELECTROSTATIC DISCHARGES (ESD);

CHEMICAL SENSORS;

EID: 0035545720     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(01)00918-2     Document Type: Article

References (14)

1. Electrostatic discharge in semiconductor devices: An overview
2. ESD issues for advanced CMOS technologies
3. The state of the Art of electrostatic discharge protection: Physics, technology, circuits, design, simulation, and scaling
4. Electrostatically protected ion sensitive field effect transistors
5. Planar compatible polymer technology for packaging of chemical microsensors
6. Charge transport and storage in metal-nitride-oxide-silicon (MNOS) structures
7. 4 by field-assisted discharge of metal-nitride-oxide-semiconductor devices