Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution

Journal of the Korean Physical Society

Volumn 39, Issue SUPPL. Part 1, 2001, Pages

  Park, J G ^a   Park, H K ^a   Kwack, K D ^a   Hong, J H ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035542144     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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