Physical properties of Y 2O 3 films fabricated by the reactive ionized cluster beam deposition technique

Journal of the Korean Physical Society

Volumn 31, Issue 1, 1997, Pages 144-148

  Choi, S C ^a   Cho, M H ^a   Whangbo, S W ^a   Whang, C N ^a   Jeon, J S ^b   Lee, S I ^b   Lee, M Y ^b  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031513545     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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