Optical anisotropy of organic layers on GaAs(001)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1658-1661

  Paraian, A M ^a   Rossow, U ^b   Park, S ^a   Salvan, G ^a   Friedrich, M ^a   Kampen, T U ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELLIPSOMETRY; ENERGY GAP; LIGHT POLARIZATION; OPTICAL PROPERTIES; PERMITTIVITY; PERMITTIVITY MEASUREMENT; SEMICONDUCTOR GROWTH; SPECTROSCOPY; SURFACE TREATMENT; THICKNESS MEASUREMENT;

EX SITU SPECTROSCOPIC ELLIPSOMETRY; IN SITU REFLECTANCE ANISOTROPY SPECTROSCOPY; MOLECULAR BEAM DEPOSITION; OPTICAL ANISOTROPY; PERYLENETETRACARBOXYLIC DIANHYDRIDE; POLARIZATION SENSITIVE METHODS; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035535370     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1387462     Document Type: Conference Paper

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