Fabrication of gated niobium nitride field emitter array

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1373-1376

  Gotoh, Y ^a   Kashiwagi, Y ^a   Nagao, M ^a,b   Kondo, T ^a   Tsuji, H ^a   Ishikawa, J ^a  

^a KYOTO UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRON BEAMS; ELECTRON EMISSION; ETCHING; EVAPORATION; ION BEAM ASSISTED DEPOSITION; LOW TEMPERATURE OPERATIONS; MOLYBDENUM; THIN FILMS; TRANSFER MOLDING; VACUUM APPLICATIONS; VOLTAGE MEASUREMENT;

ANISOTROPICAL ETCHING; ELECTRON BEAM EVAPORATION; FIELD EMITTER ARRAY; GATE APERTURE; LOW TEMPERATURE GROWTH; MECHANICAL ETCHING; NIOBIUM NITRIDE; WET ETCHING;

NIOBIUM COMPOUNDS;

EID: 0035535280     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1385913     Document Type: Conference Paper

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