Ion beam assisted deposition of niobium nitride thin films for vacuum microelectronics devices

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 925-929

  Gotoh, Y ^a   Nagao, M ^a   Ura, T ^a   Tsuji, H ^a   Ishikawa, J ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Composition; Electron emission; Ion beam assisted deposition; Niobium nitride; Sputtering yield; Work function

Indexed keywords

ARGON; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON EMISSION; ION BEAMS; ION BOMBARDMENT; MICROELECTRONICS; NITRIDES; POLYCRYSTALLINE MATERIALS; THIN FILMS; VACUUM TECHNOLOGY;

ION BEAM ASSISTED DEPOSITION; NIOBIUM NITRIDE; VACUUM MICROELECTRONICS (VME); WORK FUNCTION;

NIOBIUM COMPOUNDS;

EID: 0033513883     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00679-X     Document Type: Article

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