New coplanar GaAs P-HEMT matrix distributed amplifier IC with 250 GHz gain-bandwidth product

Journal of the Korean Physical Society

Volumn 38, Issue 3, 2001, Pages 186-190

  Yang, Sung Gi ^a   Park, Yong Soon ^a   Kim, Dae Hyun ^a   Seo, Kwang Seok ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035532360     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. K. B. Niclas and R. R. Pereira, IEEE Trans. Microwave Theory Tech. MTT-35, 296 (1987).
2. P. H. Ladbrooke, MMIC Design GaAs FETs and HEMT (Artech House, New York, 1989).
3. K. W. Kobayashi, R. Esfandiari, W. L. Jones, K. Minot, B. R. Allen, A. Freudenthal and D. C. Streit, IEEE Microwave Guided Wave Letts. 3, 11 (1993).
4. R. Heilig, D. Hollmann and G. Baumann, IEEE MTT-S, 459 (1994).
5. J. B. Beyer, S. N. Prasad, R. C. Becker, J. E. Nordman and G. K. Hohenwarter, IEEE Trans. Microwave Theory Tech. MTT-32, 268 (1984).
6. S.-G. Yang, G.-H. Ryu and K.-S. Seo, IEE Electron Letts. 35, 1943 (1999).
7. S. Kimura, Y. Imai, Y. Umeda and T. Enoki, IEEE Trans. Microwave Theory Tech. MTT-44, 1688 (1996).
8. O. P. Paixao and R. F. Souza, Microwave Optical Tech. Letts. 6, 564 (1993).
9. M.-K. Sohn, J.-H. Lee, K.-H. Kim, S.-G. Yang and K.-S. Seo, J. Korean Phys. Soc. 33, S379 (1998).