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Volumn 33, Issue SUPPL. 2, 1998, Pages
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Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0032258642
PISSN: 03744884
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (4)
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References (8)
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