|
Volumn 35, Issue 22, 1999, Pages 1943-1945
|
11 dB 0-50 GHz coplanar distributed amplifier IC based on 0.25μm non-recessed self-aligned gate GaAs P-HEMTs
a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
AMPLIFIERS (ELECTRONIC);
BANDWIDTH;
GATES (TRANSISTOR);
HIGH ELECTRON MOBILITY TRANSISTORS;
INTEGRATED CIRCUIT LAYOUT;
INTEGRATED CIRCUIT MANUFACTURE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
COPLANAR INTEGRATED CIRCUIT TECHNOLOGY;
DISTRIBUTED AMPLIFIER INTEGRATED CIRCUITS;
SELF ALIGNED GATE;
INTEGRATED CIRCUITS;
|
EID: 0033335204
PISSN: 00135194
EISSN: None
Source Type: Journal
DOI: 10.1049/el:19991312 Document Type: Article |
Times cited : (5)
|
References (7)
|