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Physica Status Solidi (B) Basic Research

Volumn 224, Issue 2, 2001, Pages 487-491

Suppressed relaxation in InGaAs/GaAs quantum dots

(5) Born, H a Heitz, R a Hoffmann, A a Guffarth, F a Bimberg, D a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; NANOCRYSTALS; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EXCITATION DENSITY; EXCITON RECOMBINATION; INGAAS/GAAS; LOW-LYING STATE; PHONON PROCESS; TEMPERATURE DEPENDENT; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035529755 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/1521-3951(200103)224:2<487::aid-pssb487>3.0.co;2-%23 Document Type: Article

Times cited : (7)

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