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Volumn 9, Issue 3-4, 2001, Pages 143-148

Electronic structure of a bi-doped Σ = 13 tilt grain boundary in ZnO

Author keywords

DFT calculations; Grain boundaries; Impurities; Segregation; Varistors

Indexed keywords

BISMUTH; DESIGN FOR TESTABILITY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; SEGREGATION (METALLOGRAPHY); VARISTORS;

EID: 0035521962     PISSN: 09277056     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1015197421831     Document Type: Conference Paper
Times cited : (12)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.