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Volumn 9, Issue 3-4, 2001, Pages 143-148
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Electronic structure of a bi-doped Σ = 13 tilt grain boundary in ZnO
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Author keywords
DFT calculations; Grain boundaries; Impurities; Segregation; Varistors
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Indexed keywords
BISMUTH;
DESIGN FOR TESTABILITY;
DOPING (ADDITIVES);
ELECTRONIC STRUCTURE;
GRAIN BOUNDARIES;
SEGREGATION (METALLOGRAPHY);
VARISTORS;
SEGREGATION ENERGY;
ZINC OXIDE;
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EID: 0035521962
PISSN: 09277056
EISSN: None
Source Type: Journal
DOI: 10.1023/A:1015197421831 Document Type: Conference Paper |
Times cited : (12)
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References (26)
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