Characterization of single grain boundaries in a Bi-doped ZnO varistor using a focused ion beam system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4493-4496

  Tanimura, Junji ^a   Wada, Osamu ^a   Kurokawa, Hiroshi ^a   Furuse, Naomi ^a   Kobayashi, Masahiro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Bi distribution; EDX; Grain boundary; I V characteristic; Microstructure; TEM; Varistor; ZnO

Indexed keywords

BISMUTH; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM; GRAIN BOUNDARIES; ION BEAMS; IRRADIATION; MICROELECTRODES; MICROSTRUCTURE; TUNGSTEN; VARISTORS;

BISMUTH SEGREGATED LAYER; FOCUSED ION BEAM; GALLIUM IONS; NONLINEAR CURRENT-VOLTAGE; SINGLE GRAIN BOUNDARY JUNCTIONS; ZINC OXIDE VARISTORS;

ZINC OXIDE;

EID: 0034229683     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4493     Document Type: Article

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