Simulating the response of electron-beam projection lithography masks under standardized mounting techniques

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2646-2651

  Chen, C F ^a   Engelstad, R L ^a   Lovell, E G ^a   Novembre, A E ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ETCHING; FINITE ELEMENT METHOD; MASKS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

ELECTRON BEAM PROJECTION LITHOGRAPHY; IN PLANE DISTORTION; MOUNTING; PATTERN TRANSFER;

ELECTRON BEAM LITHOGRAPHY;

EID: 0035519815     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1409386     Document Type: Article

References (8)

1. A. Novembre et al., Electron Projection Lithography Mask Standardization Progress Report, prepared for International SEMATECH, June 2000.
2. S. Kawata, Nikon Corporation (personal communications).
3. A. Novembre, Agere Systems (personal communications).
4. C. Brooks, IBM (personal communications).
5. G. Frisque, R. Tejeda, E. Lovell, and R. Engelstad., Proc. SPIE 3676, 768 (1999).
6. G. Dicks, Ph.D. thesis, University of Wisconsin-Madison, Madison, WI, 2000.
7. E. Cotte, M.S. thesis, University of Wisconsin-Madison, Madison, WI, 2000.
8. G. Frisque, E. Lovell, and R. Engelstad, Proc. SPIE 3997, 568 (2000).