Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties

Journal of Electronic Materials

Volumn 30, Issue 11, 2001, Pages 1421-1424

  Knauer, A ^a   Wenzel, H ^a   Erbert, G ^a   Sumpf, B ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

AlGaAs; GaAsP; Laser diodes; Metalorganic vapor phase epitaxy (MOVPE); Oxygen; Quantum wells (QW)

Indexed keywords

DEGRADATION; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

LASER STRUCTURE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035517104     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0195-8     Document Type: Article

References (16)