Applied electrostatic parallelogram actuators for microwave switches using the standard CMOS process

Journal of Micromechanics and Microengineering

Volumn 11, Issue 6, 2001, Pages 697-702

  Dai, Ching Liang ^a   Yen, Kaihsiang ^b   Chang, Pei Zen ^b  

^a ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DRY ETCHING; ELECTRIC CONNECTORS; ELECTRIC POTENTIAL; ELECTRIC TRACTION; INSERTION LOSSES; MICROMACHINING; MICROWAVE DEVICES; POLYSILICON; SUBSTRATES;

MICROWAVE SWITCHES;

ELECTROSTATIC ACTUATORS;

EID: 0035505876     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/11/6/311     Document Type: Article

References (12)

1. Fabrication technology for an integrated surface-micromachined sensor
2. CMOS compatible capacitive pressure sensor with read-out electronics
3. Micromechanical membrane switch on silicon
4. Micromachined microwave actuator (MIMAC) technology - A new turning approach for microwave integrated circuits
5. A surface micromachined miniature switch for telecommunication application with signal frequencies from DC up to 4 GHz
6. Characteristics of micromachined switch at microwave frequencies
7. Micromechanical electrostatic K-band switches
8. A wideband electrostatic microwave switch fabrication by surface micromachining
9. Electrostatic parallelogram actuators
10. Laminated high-aspect-ratio microstructures in a conventional CMOS process
11. The black silicon method V: A study of the fabricating of movable structures for micro electromechanical systems