Growth of highly oriented of Pb(Zrx, Ti1-x)O3 film on porous silicon

Thin Solid Films

Volumn 397, Issue 1-2, 2001, Pages 1-3

  Chen, Q ^a   Wu, W B ^a   Mak, C L ^b   Wong, K H ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Ferroelectric properties; Interface; Titanium oxide; X Ray diffraction

Indexed keywords

COERCIVE FORCE; CRYSTAL ORIENTATION; FILM GROWTH; LEAD COMPOUNDS; MAGNETIC HYSTERESIS; POROUS SILICON; PULSED LASER DEPOSITION; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

COERCIVE FIELDS;

FERROELECTRIC THIN FILMS;

EID: 0035500192     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01414-6     Document Type: Letter

References (16)