Extraction of oxide thickness in the nanometer range using C(V) characteristics

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 277-283

  Leroux, C ^a   Ghibaudo, G ^b   Reimbold, G ^a   Clerc, R ^b   Mathieu, S ^a  

^a CEA LETI   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

C(V) characteristics; Oxide thickness extraction method; Poisson Schrodinger simulation; Silicon dioxide

Indexed keywords

CAPACITANCE MEASUREMENT; POISSON EQUATION; SILICA; THICKNESS MEASUREMENT; VOLTAGE MEASUREMENT;

OXIDE THICKNESS EXTRACTION METHOD;

GATES (TRANSISTOR);

EID: 0035498722     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00610-4     Document Type: Conference Paper

References (6)