Properties of regioregular poly(3-alkylthiophene) Schottky diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4288-4293

  Musa, Ismail ^a   Eccleston, William ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Carrier trapping; Dielectric loss; Image force lowering; Poly(3 octylthiophene); Schottky diode; Semiconductor interface

Indexed keywords

CAPACITANCE; DIELECTRIC LOSSES; ELECTRIC CONDUCTANCE; ELECTRIC RECTIFIERS; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES;

CARRIER TRAPPING;

SCHOTTKY BARRIER DIODES;

EID: 0032131318     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4288     Document Type: Article

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