Densification Behavior in Microwave-Sintered Silicon Nitride at 28 GHz

Journal of the American Ceramic Society

Volumn 84, Issue 10, 2001, Pages 2424-2426

  Jones, Mark I ^a   Valecillos, Maria Cecilia ^a   Hirao, Kiyoshi ^a   Toriyama, Motohiro ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DENSIFICATION; GRAIN BOUNDARIES; GRAIN GROWTH; GYROTRONS; MICROWAVES; PHASE TRANSITIONS; RADIATION; SCANNING ELECTRON MICROSCOPY; SINTERING; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

MICROWAVE RADIATION; MICROWAVE SINTERED SILICON NITRIDE;

SILICON NITRIDE;

EID: 0035497688     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2001.tb01025.x     Document Type: Article

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