Effects of boron doping on the thermal conductivity of Chemical Vapor Infiltration (CVI)-SiC

Journal of Materials Synthesis and Processing

Volumn 4, Issue 3, 1996, Pages 195-204

  Kowbel, W ^a   Gao, F ^a   Withers, J C ^a   Youngblood, G E ^b  

^a MER CORPORATION   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Boron doping; Chemical vapor infiltration; Defects; SiC SiC; Thermal conductivity

Indexed keywords

ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON ENERGY LOSS SPECTROSCOPY; FIBER REINFORCED MATERIALS; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BORON DOPING; CHEMICAL VAPOR INFILTRATION; ELECTRON DIFFRACTION SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

INFILTRATION;

EID: 0030135083     PISSN: 10647562     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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