Fabry-Perot a-Si:H/a-Siox:H microcavities with an erbium-doped a-Si:H active layer

Semiconductors

Volumn 35, Issue 10, 2001, Pages 1213-1221

  Golubev, V G ^a   Dukin, A A ^a   Medvedev, A V ^a   Pevtsov, A B ^a   Sel'kin, A V ^a,b   Feoktistov, N A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035486333     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1410667     Document Type: Article

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