Mechanism of erbium electroluminescence in hydrogenated amorphous silicon

Semiconductors

Volumn 33, Issue 6, 1999, Pages 622-623

  Bresler, M S ^a   Gusev, O B ^a   Pak, P E ^a   Terukov, E I ^a   Tsendin K D ^a   Yassievich, I N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 0033149307     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187741     Document Type: Article

References (7)

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3. A. R. Zanatta, Z. A. Nunes, and Z. R. Tessler, Appl. Phys. Lett. 70, 511 (1997).
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5. W. Fuhs, I. Ulber, G. Weiser, M. S. Bresler, O. B. Gusev, A. N. Kuznetsov, V. Kh. Kudoyarova, E. I. Terukov, and I. N. Yassievich, Phys. Rev. B 56, 9545 (1997).
6. I. N. Yassievich, M. S. Bresler, and O. B. Gusev, J. Phys. C 9, 9415 (1997).
7. V. N. Abakumov, V. I. Perel, and I. N. Yassievich, Nonradiative Recombination in Semiconductors, North Holland, Amsterdam (1991).