Preparation of Ge1-yCy alloys by C implantation into Ge crystal and their Raman spectra

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 10, 2001, Pages 5880-5884

  Kanzawa, Y ^a   Katayama, K ^a   Nozawa, K ^a   Saitoh, T ^a   Kubo, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Germanium carbon; Ion implantation; Local mode; Raman spectroscopy; Thermal annealing; X ray diffraction

Indexed keywords

ANNEALING; FILM PREPARATION; ION IMPLANTATION; MOLECULAR VIBRATIONS; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SUBSTITUTION REACTIONS; X RAY DIFFRACTION ANALYSIS;

GERMANIUM CARBON ALLOYS; RAMAN INTENSITY;

GERMANIUM ALLOYS;

EID: 0035484778     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5880     Document Type: Article

References (13)