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Volumn 23, Issue 4, 1998, Pages 60-64

Advanced column-IV epitaxial materials for silicon-based optoelectronics

(1)  Sturm, James C a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

EID: 0032046332     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400030281     Document Type: Article
Times cited : (23)

References (57)
  • 15
    • 3743149017 scopus 로고
    • Silicon Molecular-Beam Epitaxy, edited by J.C. Bean, S.S. Iyer, and K.L. Wang Pittsburgh
    • D.C. Houghton, J-P. Noel, and N.L. Rowell, in Silicon Molecular-Beam Epitaxy, edited by J.C. Bean, S.S. Iyer, and K.L. Wang (Mater. Res. Soc. Symp. Proc. 220, Pittsburgh, 1991) p. 299.
    • (1991) Mater. Res. Soc. Symp. Proc. , vol.220 , pp. 299
    • Houghton, D.C.1    Noel, J.-P.2    Rowell, N.L.3
  • 39
    • 0000738194 scopus 로고    scopus 로고
    • C.L. Chang, A. St. Amour, and J.C. Sturm, Tech. Dig. Int. Electronic Device Meeting (1996). p. 257; C.L. Chang, A. St. Amour, and J.C. Sturm, Appl. Phys. Lett. 70 (1997) p. 1557.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 1557
    • Chang, C.L.1    Amour, A.St.2    Sturm, J.C.3
  • 45
    • 85034300411 scopus 로고    scopus 로고
    • private communication
    • J. Hoyt (private communication).
    • Hoyt, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.