Performance of lasers containing three, five and seven layers of quantum dots

IEE Proceedings: Optoelectronics

Volumn 148, Issue 5-6, 2001, Pages 238-242

  Herrmann, E ^a   Smowton, P M ^a   Ning, Y ^a   Groom, K M ^a   Mowbray, D J ^a   Hopkinson, M ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; MONOLAYERS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

INTRINSIC GAIN SATURATION; OPTICAL CONFINEMENT; OPTICAL MODE LOSS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0035481722     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20010745     Document Type: Article

References (13)

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6. Vertically aligned and electronically coupled growth induced InAs islands in GaAs
7. Optical mode loss and gain of multiple layer quantum dot lasers
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9. 1-xAs double heterostructure planar stripe laser
10. Semiconducting and other major properties of gallium arsenide
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12. Thermodynamic balance in quantum dot lasers