III-N ternary epi-layers grown on the GaN bulk crystals

Journal of Crystal Growth

Volumn 231, Issue 3, 2001, Pages 352-356

  Leszczynski, M ^a   Prystawko, P ^a   Czernecki, R ^a   Lehnert, J ^a   Suski, T ^a   Perlin, P ^a   Wisniewski, P ^a   Grzegory, I ^a   Nowak, G ^a   Porowski, S ^a   Albrecht, M ^b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

A3. Metalorganic vapour phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting alloys

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HIGH PRESSURE EFFECTS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HEXAGONAL PLATELETS;

SEMICONDUCTING FILMS;

EID: 0035480388     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01465-8     Document Type: Conference Paper

References (11)