Terahertz-time domain spectroscopic measurement of moderately-doped silicon using InAs emitter under magnetic field

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 867-872

  Quema, A ^a   Migita, M ^a   Nashima, S ^a   Hangyo, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Complex refractive index; Fourier spectrum; Magnetic field; Signal to noise (S N) ratio; Terahertz time domain spectroscopy (THz TDS)

Indexed keywords

LIGHT EMISSION; MAGNETIC FIELD EFFECTS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SIGNAL TO NOISE RATIO; SPECTROSCOPIC ANALYSIS; TIME DOMAIN ANALYSIS;

FOURIER SPECTRUM; INDIUM ARSENIDE EMITTER; LOW FREQUENCY REGION; TERAHERTZ-TIME DOMAIN SPECTROSCOPIC MEASUREMENT;

SEMICONDUCTING SILICON;

EID: 0035246512     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.867     Document Type: Article

References (14)