3-D analysis of the breakdown localised defects of ACS through a triac study

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1695-1700

  Forster, S ^a,b   Lequeu, T ^a   Jerisian R ^a   Hoffmann, A ^b  

^a STMICROELECTRONICS   (France)

^b CLOES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000320618     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00136-0     Document Type: Article

References (8)

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6. R.G.Rodrigues, D.E. Piccone, W.H. Tobin, L.W. Willinger, T.A. Borrow, T.A. Hansen, J.Zhao, L. Cao, « Operation of power semiconductors at their thermal limit », IEEE IAS Annual Meeting, pp.1-12, (1998).
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8. P.A. Aloïsi, « Thermal fatigue in power semiconductor », PCI Conference (Power Conversion International), pp.401-410, (1987).