Hot-carrier reliability for Si and SiGe HBTs: Aging procedure, extrapolation model limitations and applications

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1307-1312

  Revil, N ^a   Garros, X ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; EXTRAPOLATION; HOT CARRIERS; MATHEMATICAL MODELS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS;

WAFER LEVEL TESTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035457040     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00203-7     Document Type: Article

References (8)

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