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Volumn 231, Issue 1-2, 2001, Pages 148-170

Simulation of radial dopant segregation in vertical Bridgman growth of GaSe, a semiconductor with anisotropic solid-phase thermal conductivity

(2) Lee, Hanjie a Pearlstein, Arne J a

a University of Illinois at Urbana Champaign (United States)

Author keywords

A1. Computer simulation; A1. Convection; A1. Doping; A1. Segregation; A2. Bridgman technique; B2. Nonlinear optical materials

Indexed keywords

ANISOTROPY; APPROXIMATION THEORY; COMPUTATIONAL METHODS; COMPUTER SIMULATION; HEAT CONVECTION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NONLINEAR OPTICS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY OF SOLIDS;

ISOTROPIC CONDUCTIVITY; VERTICAL BRIDGMAN GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035452371 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01444-0 Document Type: Article

Times cited : (8)

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