Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 473-476

  Pozina, G ^a   Bergman, J P ^a   Monemar, B ^a   Iwaya, M ^b   Nitta, S ^b   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

GALLIUM NITRIDE; MASS TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH;

THREADING DISLOCATION DENSITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035451338     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01257-X     Document Type: Article

References (5)