Suppression of reverse short channel effect by high energy implantation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 679-682

  Chaudhry, S ^a   Rafferty, C S ^a   Nagy, W J ^a   Chyan, Y F ^a   Carroll, M S ^a   Chen, A S ^a   Lee, K H ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ENERGY IMPLANTATION (HEI); REVERSE SHORT CHANNEL EFFECTS (RSCE);

ANNEALING; BORON; GATES (TRANSISTOR); ION IMPLANTATION; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 84886447993     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)