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Volumn 113-114, Issue , 1997, Pages 9-17

Fabrication and characterization of epitaxial films of ionic materials

Author keywords

Alkali halide; Growth mechanism; Hetero epitaxy; Interface

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); LITHIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS;

EID: 0031547252     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00888-4     Document Type: Article
Times cited : (32)

References (40)
  • 4
    • 0042510586 scopus 로고
    • L.G. Schulz, Acta. Cryst. 4 (1951) 483; 5 (1952) 130.
    • (1952) Acta. Cryst. , vol.5 , pp. 130
  • 38
    • 30244474216 scopus 로고
    • Master Thesis, University of Tokyo
    • Y. Fujikawa, Master Thesis, University of Tokyo (1993).
    • (1993)
    • Fujikawa, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.