SCOPUS 정보 검색 플랫폼

Volumn 148, Issue 4, 2001, Pages 195-198

Improving characteristics of Si-based trench-electrode metal-semiconductor-metal photodetectors using self-aligned process

(4) Lin, C S a Yeh, R H a Liao, C H a Hong, J W a

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRODES; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR METAL BOUNDARIES;

DARK CURRENTS;

PHOTODETECTORS;

EID: 0035429480 PISSN: 13502433 EISSN: None Source Type: Journal
DOI: 10.1049/ip-opt:20010636 Document Type: Conference Paper

Times cited : (5)

References (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.