High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)

Electronics Letters

Volumn 32, Issue 10, 1996, Pages 929-930

  Laih, L H ^a   Chen, Y A ^a   Tsay, W C ^a   Hong, J W ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Amorphous semiconductors; Metal semiconductor metal structures; Photodetectors

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRODES; HELIUM NEON LASERS; HYDROGEN; LIGHT ABSORPTION; PHOSPHORUS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

AMORPHOUS SEMICONDUCTOR; DARK CURRENT; GLASS FIBRE; PHOTOCURRENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POWER METER; SEMICONDUCTOR PARAMETER ANALYZERS;

PHOTODETECTORS;

EID: 0030576244     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960610     Document Type: Article

References (5)

1. SCHUMACHER, H., LEBLANC, H.P., SOOLE, J., and BHAT, R.: 'An investigation of the optoresponse of GaAs/InGaAs MSM photodetectors', IEEE Electron Device Lett., 1988, 9, pp. 607-609
2. MULLINS, B.W., SOARES, S.F., MCARDLE, K.A., WILSON, C.M., and BRUECK, S.R.J.: 'A simple high-speed Si Schottky photodetector', IEEE Photonics Technol. Lett., 1991, 3, pp. 360-362
3. SEO, J.W., KETTERSON, A.A., BALLEGEER, D.O., CHENG, K.Y., ADESIDA, I., LI, X., and GESSERT, T.: 'A comparative study of metal-semiconductor-metal photodetector on GaAs with indium-tinoxide and Ti/Au electrodes', IEEE Photonics Technol. Lett., 1992, 4, pp. 888-890
4. DEIMEL, P. P., HEIMHOFER, B., KROTZ, O., LILIENHOF, H. J., WIND, J., MULLER, O., and VOGES, E.: 'Amorphous SiGe:H photodetectors on glass optical waveguides'. IEEE Photonics Technol. Lett., 1990, 2, pp. 499-501
5. -3) Si and SiGe films grown by photo-CVD at 250°C', J. Electron. Mater., 1990, 10, pp. 1083-1087