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Volumn 230, Issue 1-2, 2001, Pages 48-56
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Numerical 3D study of FZ growth: Dependence on growth parameters and melt instability
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Author keywords
A1. Computer simulation; A1. Fluid flows; A1. Mass transfer; A2. Floating zone technique; B2. Semiconducting silicon
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Indexed keywords
APPROXIMATION THEORY;
COMPUTATIONAL FLUID DYNAMICS;
COMPUTER SIMULATION;
MASS TRANSFER;
MATHEMATICAL MODELS;
SEMICONDUCTING SILICON;
STEADY FLOW;
FLOATING ZONE METHOD;
CRYSTAL GROWTH FROM MELT;
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EID: 0035426382
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01318-5 Document Type: Conference Paper |
Times cited : (23)
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References (13)
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