Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals

Journal of Crystal Growth

Volumn 180, Issue 3-4, 1997, Pages 372-380

  Muhlbauer A ^a   Muiznieks, A ^a,b   Virbulis, J ^a,b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITY OF LATVIA   (Latvia)

Author keywords

Dopant concentration field; Finite element method; Floating zone growth; Si crystal

Indexed keywords

COMPOSITION EFFECTS; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY MEASUREMENT; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

DOPANT SEGREGATION EFFECTS; FLOATING ZONE GROWTH; NEEDLE EYE TECHNIQUE;

SEMICONDUCTING SILICON;

EID: 0031244663     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00235-2     Document Type: Article

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