Recombination mechanisms in AlGaN and their effects on the response of ultraviolet detectors

Semiconductor Science and Technology

Volumn 16, Issue 8, 2001, Pages 720-723

  Reverchon, J L ^a   Poisson, M A ^a   Duboz, J Y ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; PHOTONS; ULTRAVIOLET DETECTORS;

ALUMINUM GALLIUM NITRIDE; CONDUCTION BAND; PHOTON ENERGY; POWER DENSITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035421139     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/8/315     Document Type: Article

References (9)