On the anomalous SIMS transient of B in Si: The influence of surface conditions

Surface and Interface Analysis

Volumn 31, Issue 8, 2001, Pages 799-801

  Alkemade, P F A ^a   Liu, Z X ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

B in Si; Depth profiling; Measurement accuracy; Secondary ion mass spectrometry; Surface transient

Indexed keywords

ION BEAMS; REDUCTION; SECONDARY ION MASS SPECTROMETRY; SILICON;

DEPTH PROFILING; MEASUREMENT ACCURACY; SURFACE TRANSIENT;

BORON;

EID: 0035418920     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1102     Document Type: Article

References (7)