Capacitance analysis for AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactor diodes

Journal of Applied Physics

Volumn 83, Issue 3, 1998, Pages 1457-1462

  Fu, Y ^a   Dillner, L ^b   Stake, J ^b   Willander, M ^a   Kollberg, E L ^b  

^a Dept Microlectron and Nanoscience ^*  (Sweden)

^b UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRONIC DENSITY OF STATES; FREQUENCY MULTIPLYING CIRCUITS; HETEROJUNCTIONS; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; VARACTORS;

CARRIER EFFECTIVE MASS; HETEROSTRUCTURE BARRIER VARACTOR; POISSON EQUATIONS; SCHRODINGER EQUATIONS; SEMICONDUCTOR PARTICLE;

CAPACITANCE;

EID: 0031999807     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366850     Document Type: Article

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