Analysis of electrical characteristics in 6H-SiC junctions irradiated by neutron

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 21, Issue 7, 2000, Pages 691-696

  Shang, Yechun ^a   Zhang, Yimen ^a   Zhang, Yuming ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; NEUTRON IRRADIATION; SILICON CARBIDE;

DEEP LEVEL TRAP; RECOMBINATION CENTER;

SEMICONDUCTOR JUNCTIONS;

EID: 0034216952     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)